IPP086N10N3 Tech Spezifikatioune
Infineon Technologies - IPP086N10N3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPP086N10N3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 75µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-3-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPP086N10N3.
Produktiounsattriff | ||||
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Part Number | IPP086N10N3 | IPP082N10NF2SAKMA1 | IPP086N10N3GXKSA1 | IPP083N10N5AKSA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Package protegéieren | Bulk | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Serie | OptiMOS™ | StrongIRFET™ 2 | OptiMOS™ | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V | 8.2mOhm @ 50A, 10V | 8.6mOhm @ 73A, 10V | 8.3mOhm @ 73A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V | 2000 pF @ 50 V | 3980 pF @ 50 V | 2730 pF @ 50 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 15A (Ta), 77A (Tc) | 80A (Tc) | 73A (Tc) |
Supplier Device Package | PG-TO220-3-1 | PG-TO220-3 | PG-TO220-3 | PG-TO220-3 |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 42 nC @ 10 V | 55 nC @ 10 V | 37 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 3.5V @ 75µA | 3.8V @ 46µA | 3.5V @ 75µA | 3.8V @ 49µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 125W (Tc) | 3.8W (Ta), 100W (Tc) | 125W (Tc) | 100W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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