IPG20N04S4-08 Tech Spezifikatioune
Infineon Technologies - IPG20N04S4-08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPG20N04S4-08
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 30µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-4 | |
| Serie | OptiMOS™T2 | |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V | |
| Power - Max | 65W (Tc) | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 40V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | IPG20N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPG20N04S4-08.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPG20N04S4-08 | IPG20N04S409ATMA1 | IPG15N06S3L-45 | IPG20N04S408ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power - Max | 65W (Tc) | 54W (Tc) | 21W | 65W |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 20A (Tc) | 15A | 20A |
| Vgs (th) (Max) @ Id | 4V @ 30µA | 4V @ 22µA | 2.2V @ 10µA | 4V @ 30µA |
| Supplier Device Package | PG-TDSON-8-4 | PG-TDSON-8 | PG-TDSON-8-4 | PG-TDSON-8-4 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 40V | 40V | 55V | 40V |
| Basis Produktnummer | IPG20N | IPG20N | IPG15N | IPG20N |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | 28nC @ 10V | 20nC @ 10V | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 25V | 2250pF @ 25V | 1420pF @ 25V | 2940pF @ 25V |
| Package / Case | 8-PowerVDFN | 8-PowerTDFN | 8-PowerVDFN | 8-PowerVDFN |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V | 8.6mOhm @ 17A, 10V | 45mOhm @ 10A, 10V | 7.6mOhm @ 17A, 10V |
| FET Feature | - | - | Logic Level Gate | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | OptiMOS™T2 | Automotive, AEC-Q101, OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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