IPD90R1K2C3ATMA1 Tech Spezifikatioune
Infineon Technologies - IPD90R1K2C3ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPD90R1K2C3ATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 310µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO252-3 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V | |
| Power Dissipation (Max) | 83W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.1A (Tc) | |
| Basis Produktnummer | IPD90 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPD90R1K2C3ATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPD90R1K2C3ATMA1 | IPD90P04P4L04ATMA1 | IPD95R2K0P7ATMA1 | IPD90P04P4L04ATMA2 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon | Infineon |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
| Entworf fir Source Voltage (Vdss) | 900 V | 40 V | - | - |
| Supplier Device Package | PG-TO252-3 | PG-TO252-3-313 | - | - |
| Serie | CoolMOS™ | OptiMOS™ | - | - |
| Basis Produktnummer | IPD90 | IPD90 | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.1A (Tc) | 90A (Tc) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | 176 nC @ 10 V | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| FET Typ | N-Channel | P-Channel | - | - |
| Power Dissipation (Max) | 83W (Tc) | 125W (Tc) | - | - |
| Vgs (th) (Max) @ Id | 3.5V @ 310µA | 2.2V @ 250µA | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | 11570 pF @ 25 V | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V | 4.3mOhm @ 90A, 10V | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±16V | - | - |
Eroflueden IPD90R1K2C3ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPD90R1K2C3ATMA1 - Infineon Technologies.
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IPDD60R080G7XTMA1IPD90P04P4-05 MOSCypress Semiconductor (Infineon Technologies)IPD90P04P4L04IPDD60R050G7InfineonIPD95R2K0P7Cypress Semiconductor (Infineon Technologies)IPD95R750P7Cypress Semiconductor (Infineon Technologies)IPD90P04P405ATMA1InfineonIPD90P04P405ATMA2InfineonIPD95R450P7Cypress Semiconductor (Infineon Technologies)IPD95R1K2P7Cypress Semiconductor (Infineon Technologies)IPD90R1K2C3Cypress Semiconductor (Infineon Technologies)IGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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