IPB049N06L3G Tech Spezifikatioune
Infineon Technologies - IPB049N06L3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB049N06L3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 58µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3 | |
| Serie | OptiMOS™ 3 | |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 115W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB049N06L3G.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | IPB049N06L3G | IPB049N08N5ATMA1 | IPB048N06LG | IPB044N15N5ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 4.5V, 10V | 8V, 10V |
| Vgs (th) (Max) @ Id | 2.2V @ 58µA | 3.8V @ 66µA | 2V @ 270µA | 4.6V @ 264µA |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | 53 nC @ 10 V | 225 nC @ 10 V | 100 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | OptiMOS™ 3 | OptiMOS™ | OptiMOS® | OptiMOS™ |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO-263-3-2 | PG-TO263-7 |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 80 V | 60 V | 150 V |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V | 3770 pF @ 40 V | 7600 pF @ 30 V | 8000 pF @ 75 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V | 4.9mOhm @ 80A, 10V | 4.7mOhm @ 100A, 10V | 4.4mOhm @ 87A, 10V |
| Power Dissipation (Max) | 115W (Tc) | 125W (Tc) | 300W (Tc) | 300W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 100A (Tc) | 174A (Tc) |
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IPB048N15N5LFATMA1Infineon TechnologiesMOSFET N-CH 150V 120A D2PAKIPB04N03L MOSCypress Semiconductor (Infineon Technologies)IPB048N15N5LFCypress Semiconductor (Infineon Technologies)IPB042N10N3GATMA1Infineon TechnologiesMOSFET N-CH 100V 100A D2PAKIPB044N15N5Cypress Semiconductor (Infineon Technologies)IPB049NE7N3GATMA1Infineon TechnologiesMOSFET N-CH 75V 80A D2PAKIPB048N15N5ATMA1Infineon TechnologiesMOSFET N-CH 150V 120A TO263-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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