BSZ100N06NSATMA1 Tech Spezifikatioune
Infineon Technologies - BSZ100N06NSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSZ100N06NSATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.3V @ 14µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TSDSON-8-FL | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 2.1W (Ta), 36W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1075 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | |
| Basis Produktnummer | BSZ100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSZ100N06NSATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSZ100N06NSATMA1 | BSZ110N06NS3GATMA1 | BSZ105N04NSG | BSZ110N08NS5ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 40 V | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1075 pF @ 30 V | 2700 pF @ 30 V | 1300 pF @ 20 V | 1300 pF @ 40 V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V | 11mOhm @ 20A, 10V | 10.5mOhm @ 20A, 10V | 11mOhm @ 20A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 10V | 6V, 10V |
| Vgs (th) (Max) @ Id | 3.3V @ 14µA | 4V @ 23µA | 4V @ 14µA | 3.8V @ 22µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™3 | OptiMOS™ |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 20A (Tc) | 11A (Ta), 40A (Tc) | 40A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | BSZ100 | BSZ110 | - | BSZ110 |
| Power Dissipation (Max) | 2.1W (Ta), 36W (Tc) | 2.1W (Ta), 50W (Tc) | 2.1W (Ta), 35W (Tc) | 50W (Tc) |
| FET Feature | - | - | - | - |
| Package / Case | 8-PowerTDFN | 8-PowerVDFN | 8-PowerTDFN | 8-PowerTDFN |
| Supplier Device Package | PG-TSDSON-8-FL | PG-TSDSON-8 | PG-TSDSON-8 | PG-TSDSON-8-FL |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 33 nC @ 10 V | 17 nC @ 10 V | 18.5 nC @ 10 V |
Eroflueden BSZ100N06NSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSZ100N06NSATMA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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