BSV236SPH6327XTSA1 Tech Spezifikatioune
Infineon Technologies - BSV236SPH6327XTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSV236SPH6327XTSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1.2V @ 8µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-SOT363-PO | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 175mOhm @ 1.5A, 4.5V | |
Power Dissipation (Max) | 560mW (Ta) | |
Package / Case | 6-VSSOP, SC-88, SOT-363 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | |
Basis Produktnummer | BSV236 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSV236SPH6327XTSA1.
Produktiounsattriff | ||||
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Part Number | BSV236SPH6327XTSA1 | NTD60N03T4 | IPB083N15N5LFATMA1 | FQP9N90C |
Hiersteller | Infineon Technologies | onsemi | Infineon Technologies | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 15 V | 2150 pF @ 24 V | 210 pF @ 75 V | 2730 pF @ 25 V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Basis Produktnummer | BSV236 | NTD60 | IPB083 | FQP9 |
Entworf fir Source Voltage (Vdss) | 20 V | 28 V | 150 V | 900 V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Package / Case | 6-VSSOP, SC-88, SOT-363 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Vgs (th) (Max) @ Id | 1.2V @ 8µA | 3V @ 250µA | 4.9V @ 134µA | 5V @ 250µA |
Vgs (Max) | ±12V | ±20V | ±20V | ±30V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 10V | 10V |
Power Dissipation (Max) | 560mW (Ta) | 75W (Tc) | 179W (Tc) | 205W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | PG-SOT363-PO | DPAK | PG-TO263-3 | TO-220-3 |
Rds On (Max) @ Id, Vgs | 175mOhm @ 1.5A, 4.5V | 7.5mOhm @ 30A, 10V | 8.3mOhm @ 100A, 10V | 1.4Ohm @ 4A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 4.5 V | 30 nC @ 4.5 V | 45 nC @ 10 V | 58 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | 60A (Tc) | 105A (Tc) | 8A (Tc) |
Serie | OptiMOS™ | - | OptiMOS™ | QFET® |
Eroflueden BSV236SPH6327XTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSV236SPH6327XTSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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