BSP373NH6327XTSA1 Tech Spezifikatioune
Infineon Technologies - BSP373NH6327XTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSP373NH6327XTSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 218µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-SOT223-4 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 240mOhm @ 1.8A, 10V | |
Power Dissipation (Max) | 1.8W (Ta) | |
Package / Case | TO-261-4, TO-261AA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Ta) | |
Basis Produktnummer | BSP373 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSP373NH6327XTSA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSP373NH6327XTSA1 | BSP373 E6327 | BSP372NH6327XTSA1 | BSP373L6327 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 240mOhm @ 1.8A, 10V | 300mOhm @ 1.7A, 10V | 230mOhm @ 1.8A, 10V | 300mOhm @ 1.7A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | 1.8W (Ta) | 1.8W (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 | PG-SOT223-4 | PG-SOT223 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Ta) | 1.7A (Ta) | 1.8A (Ta) | 1.7A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 218µA | 4V @ 1mA | 1.8V @ 218µA | 4V @ 1mA |
Basis Produktnummer | BSP373 | - | BSP372 | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V | 550 pF @ 25 V | 329 pF @ 25 V | 550 pF @ 25 V |
Serie | OptiMOS™ | SIPMOS® | OptiMOS™ | SIPMOS® |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V | - | 14.3 nC @ 10 V | - |
Eroflueden BSP373NH6327XTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSP373NH6327XTSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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