BSC900N20NS3GATMA1 Tech Spezifikatioune
Infineon Technologies - BSC900N20NS3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC900N20NS3GATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 30µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-5 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.6A, 10V | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.2A (Tc) | |
| Basis Produktnummer | BSC900 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC900N20NS3GATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC900N20NS3GATMA1 | BSC889N03MSG | BSC886N03LSG | BSC889N03LSG |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V | 1500 pF @ 15 V | 2100 pF @ 15 V | 1300 pF @ 15 V |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Entworf fir Source Voltage (Vdss) | 200 V | 30 V | 30 V | 30 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Serie | OptiMOS™ | OptiMOS™ 3 | OptiMOS™3 | OptiMOS™ 3 |
| Power Dissipation (Max) | 62.5W (Tc) | 2.5W (Ta), 28W (Tc) | 2.5W (Ta), 39W (Tc) | 2.5W (Ta), 28W (Tc) |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 10 V | 20 nC @ 10 V | 26 nC @ 10 V | 16 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | BSC900 | - | - | - |
| Supplier Device Package | PG-TDSON-8-5 | PG-TSDSON-8 | PG-TDSON-8 | PG-TDSON-8 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 4V @ 30µA | 2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.2A (Tc) | 12A (Ta), 44A (Tc) | 13A (Ta), 65A (Tc) | 13A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.6A, 10V | 9.1mOhm @ 30A, 10V | 6mOhm @ 30A, 10V | 9mOhm @ 30A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden BSC900N20NS3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC900N20NS3GATMA1 - Infineon Technologies.
BSC9132NXE7KNKBNXP SemiconductorsBSC889N03MSGInfineon TechnologiesN-CHANNEL POWER MOSFETBSC886N03LSGInfineon TechnologiesN-CHANNEL POWER MOSFET
BSC9131NSE1KHKBFreescale SemiconductorIC MPU QORIQ 800MHZ 520FCBGABSC889N03LSGInfineon TechnologiesN-CHANNEL POWER MOSFETBSC900N20NS3GCypress Semiconductor (Infineon Technologies)BSC886N03LSG E8178Cypress Semiconductor (Infineon Technologies)BSC9131NSN1KHKBFreescale SemiconductorQORIQ QONVERGE SOC, 1GHZ STARCORBSC9132NXE7MNMBBSC9132SJE7MNMBBSC889N03MSCypress Semiconductor (Infineon Technologies)BSC889N03LSCypress Semiconductor (Infineon Technologies)BSC9132NSE7MNMB
BSC9131NSN1KHKBNXP USA Inc.IC MPU Q OR IQ 800MHZ 520FCBGABSC9131NSE1KHKBNXP USA Inc.IC MPU QORIQ 800MHZ 520FCBGABSC900N20NSCypress Semiconductor (Infineon Technologies)BSC886N03LSCypress Semiconductor (Infineon Technologies)BSCD054ZOWIE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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