AUIRF7759L2TR Tech Spezifikatioune
Infineon Technologies - AUIRF7759L2TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - AUIRF7759L2TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric L8 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V | |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | |
Package / Case | DirectFET™ Isometric L8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 375A (Tc) | |
Basis Produktnummer | AUIRF7759 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies AUIRF7759L2TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRF7759L2TR | AUIRF8739L2TR | AUIRF7737L2TR | AUIRF7736M2TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V | 0.6mOhm @ 195A, 10V | 1.9mOhm @ 94A, 10V | 3mOhm @ 65A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V | 17890 pF @ 25 V | 5469 pF @ 25 V | 4267 pF @ 25 V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3.9V @ 250µA | 4V @ 150µA | 4V @ 150µA |
Basis Produktnummer | AUIRF7759 | AUIRF8739 | AUIRF7737 | AUIRF7736 |
Vgs (Max) | ±20V | 40V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DIRECTFET L6 | DirectFET™ Isometric M4 |
Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V | 562 nC @ 10 V | 134 nC @ 10 V | 108 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 75 V | 40 V | 40 V | 40 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) | 3.8W (Ta), 340W (Tc) | 3.3W (Ta), 83W (Tc) | 2.5W (Ta), 63W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 375A (Tc) | 57A (Ta), 545A (Tc) | 31A (Ta), 156A (Tc) | 22A (Ta), 108A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | DirectFET™ Isometric L8 | DirectFET™ Isometric L8 | DirectFET™ Isometric L6 | DirectFET™ Isometric M4 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden AUIRF7759L2TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir AUIRF7759L2TR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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