AOTF12N30 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOTF12N30 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOTF12N30
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 420mOhm @ 6A, 10V | |
Power Dissipation (Max) | 36W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 300 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.5A (Tc) | |
Basis Produktnummer | AOTF12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOTF12N30.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOTF12N30 | AOTF11S65L | AOTF12N50 | AOTF11S60 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha and Omega Semiconductor, Inc. |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 4.5V @ 250µA | 4.1V @ 250µA |
Package protegéieren | Tube | Tube | Tube | - |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 13.2 nC @ 10 V | 37 nC @ 10 V | 11nC @ 10V |
Entworf fir Source Voltage (Vdss) | 300 V | 650 V | 500 V | 600V |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V | 646 pF @ 100 V | 1633 pF @ 25 V | 545pF @ 100V |
Rds On (Max) @ Id, Vgs | 420mOhm @ 6A, 10V | 399mOhm @ 5.5A, 10V | 520mOhm @ 6A, 10V | 399 mOhm @ 3.8A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Supplier Device Package | TO-220F | TO-220F | TO-220F | TO-220-3F |
Power Dissipation (Max) | 36W (Tc) | 31W (Tc) | 50W (Tc) | 38W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.5A (Tc) | 11A (Tc) | 12A (Tc) | 11A (Tc) |
Basis Produktnummer | AOTF12 | AOTF11 | AOTF12 | - |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Serie | - | aMOS™ | - | aMOS™ |
Eroflueden AOTF12N30 PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOTF12N30 - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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