SURS8260T3G-VF01 Tech Spezifikatioune
onsemi - SURS8260T3G-VF01 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - SURS8260T3G-VF01
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.45 V @ 2 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | SMB | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Automotive, AEC-Q101 | |
| Reverse Recovery Time (trr) | 75 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AA, SMB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | SURS8260 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi SURS8260T3G-VF01.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SURS8260T3G-VF01 | SURS8360BT3G | SURS8205T3G | SURS8210T3G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Capacitance @ Vr, F. | - | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | SURS8260 | SURS8360 | SURS8205 | SURS8210 |
| Serie | Automotive, AEC-Q101 | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Reverse Recovery Time (trr) | 75 ns | 75 ns | 30 ns | 30 ns |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | 3A | 2A | 2A |
| Package / Case | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -60°C ~ 175°C | -60°C ~ 175°C |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | 30 µA @ 300 V | 2 µA @ 50 V | 2 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 50 V | 100 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.45 V @ 2 A | 1.25 V @ 3 A | 940 mV @ 2 A | 940 mV @ 2 A |
| Supplier Device Package | SMB | SMB | SMB | SMB |
Eroflueden SURS8260T3G-VF01 PDF DataDhusts an onsemi Dokumentatioun fir SURS8260T3G-VF01 - onsemi.
SURS8360BT3GonsemiDIODE GEN PURP 600V 3A SMBSURS8205T3GonsemiDIODE GEN PURP 50V 2A SMBSURS8210T3GonsemiDIODE GEN PURP 100V 2A SMBSURS8140T3GonsemiDIODE GEN PURP 400V 1A SMB
SURS8320T3G-IR01AMI Semiconductor/onsemiSURS8105T3GonsemiDIODE GEN PURP 50V 1A SMBSURS8260T3GonsemiDIODE GEN PURP 600V 2A SMB
SURS8340T3GonsemiDIODE GEN PURP 400V 3A SMCSURS8360T3G-VF01onsemiDIODE SCHOTTKYSURS8120T3GonsemiDIODE GEN PURP 200V 1A SMBSURS8320T3GonsemiDIODE GEN PURP 200V 3A SMCSURS8110T3GonsemiDIODE GEN PURP 100V 1A SMBSURS8220T3GonsemiDIODE GEN PURP 200V 2A SMBSURS8360T3GonsemiDIODE GEN PURP 600V 3A SMCSURS8160T3GonsemiDIODE GEN PURP 600V 1A SMBSURS8115T3GonsemiDIODE GEN PURP 150V 1A SMBSURS8160T3G-IR02AMI Semiconductor/onsemiSURS8160T3onsemiDIODE GEN PURP 600V 1A SMB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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