NTHD5904NT1 Tech Spezifikatioune
onsemi - NTHD5904NT1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTHD5904NT1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ChipFET™ | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.3A, 4.5V | |
| Power Dissipation (Max) | 640mW (Ta) | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 16 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
| Basis Produktnummer | NTHD59 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTHD5904NT1.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | NTHD5904NT1 | NTHL033N65S3HF | NTHL040N120SC1 | NTHD4P02FT1 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 5V @ 2.5mA | 4.3V @ 10mA | - |
| Basis Produktnummer | NTHD59 | NTHL033 | NTHL040 | NTHD4P |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | - |
| Power Dissipation (Max) | 640mW (Ta) | 500W (Tc) | 348W (Tc) | - |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 10V | 20V | - |
| Vgs (Max) | ±8V | ±30V | +25V, -15V | - |
| Package protegéieren | Tape & Reel (TR) | Tube | Tube | Bulk |
| Mounting Type | Surface Mount | Through Hole | Through Hole | - |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 16 V | 6720 pF @ 400 V | 1781 pF @ 800 V | - |
| Entworf fir Source Voltage (Vdss) | 20 V | 650 V | 1200 V | - |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 70A (Tc) | 60A (Tc) | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Package / Case | 8-SMD, Flat Lead | TO-247-3 | TO-247-3 | - |
| Serie | - | FRFET®, SuperFET® III | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V | 188 nC @ 10 V | 106 nC @ 20 V | - |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.3A, 4.5V | 33mOhm @ 35A, 10V | 56mOhm @ 35A, 20V | - |
| Supplier Device Package | ChipFET™ | TO-247-3 | TO-247-3 | - |
Eroflueden NTHD5904NT1 PDF DataDhusts an onsemi Dokumentatioun fir NTHD5904NT1 - onsemi.
NTHD4P02FSIPUSEMINTHL033N65S3HFonsemiMOSFET N-CH 650V 70A TO247-3NTHD5903T1GonsemiMOSFET 2P-CH 20V 2.2A CHIPFETNTHL040N120SC1onsemiSICFET N-CH 1200V 60A TO247-3NTHD5903T1onsemiMOSFET 2P-CH 20V 2.2A CHIPFETNTHD4P02FT1onsemiMOSFET/SCHOTTKY P-CH 20V CHIPFETNTHL040N65S3FonsemiMOSFET N-CH 650V 65A TO247-3NTHD5902T1GAMI Semiconductor/onsemiNTHD5903AMI Semiconductor/onsemiNTHD4N02FT1onsemiMOSFET N-CH 20V 2.9A CHIPFETNTHD4N02FT1GonsemiMOSFET N-CH 20V 2.9A CHIPFETNTHD4P02FT1GonsemiMOSFET P-CH 20V 2.2A CHIPFETNTHD5904NT1GonsemiMOSFET N-CH 20V 2.5A CHIPFETNTHD5905T1onsemiMOSFET 2P-CH 8V 3A CHIPFETNTHL041N60S5HONsemiNTHL020N090SC1ONsemiNTHL027N65S3HFONsemiNTHL040N65S3HFONsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.