NTGS3446T1G Tech Spezifikatioune
onsemi - NTGS3446T1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTGS3446T1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.1A, 4.5V | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
| Basis Produktnummer | NTGS3446 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTGS3446T1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NTGS3446T1G | NTGS3447PT1G | NTGS3443T1G | NTGS3441T1G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Basis Produktnummer | NTGS3446 | NTGS34 | NTGS3443 | NTGS3441 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 3.4A (Ta) | 2.2A (Ta) | 1.65A (Ta) |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | - | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 20 V | 12 V | 20 V | 20 V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.1A, 4.5V | 40mOhm @ 4.7A, 4.5V | 65mOhm @ 4.4A, 4.5V | 90mOhm @ 3.3A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) | 700mW (Ta) | 500mW (Ta) | 500mW (Ta) |
| Vgs (Max) | ±12V | ±8V | ±12V | ±8V |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V | 1053 pF @ 6 V | 565 pF @ 5 V | 480 pF @ 5 V |
| FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | 15 nC @ 4.5 V | 15 nC @ 4.5 V | 14 nC @ 4.5 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden NTGS3446T1G PDF DataDhusts an onsemi Dokumentatioun fir NTGS3446T1G - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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