MJD117G Tech Spezifikatioune
onsemi - MJD117G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD117G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Transistor Type | PNP - Darlington | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.75 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 25MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 20µA | |
| Aktuell - Sammler (Ic) (Max) | 2 A | |
| Basis Produktnummer | MJD117 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD117G.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | MJD117G | MJD117T4G | MJD117 | MJD117-TP |
| Hiersteller | onsemi | onsemi | onsemi | Micro Commercial Co |
| Supplier Device Package | DPAK | DPAK | DPAK | D-Pak |
| Aktuell - Kollektorat Cutoff (Max) | 20µA | 20µA | 20µA | 10nA |
| Aktuell - Sammler (Ic) (Max) | 2 A | 2 A | 2 A | 2 A |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | 150°C (TJ) |
| Basis Produktnummer | MJD117 | MJD117 | MJD11 | MJD117 |
| Frequenz - Iwwergang | 25MHz | 25MHz | 25MHz | 25MHz |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | 1000 @ 2A, 3V | 1000 @ 2A, 3V | 1000 @ 2A, 3V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Type | PNP - Darlington | PNP - Darlington | PNP - Darlington | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V | 100 V |
| Power - Max | 1.75 W | 1.75 W | 1.75 W | 1.75 W |
| Serie | - | - | - | - |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | 3V @ 40mA, 4A | 3V @ 40mA, 4A | 3V @ 40mA, 4A |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Eroflueden MJD117G PDF DataDhusts an onsemi Dokumentatioun fir MJD117G - onsemi.
MJD117T4GonsemiTRANS PNP DARL 100V 2A DPAK
MJD117L-U/PKECMJD117onsemiTRANS PNP DARL 100V 2A DPAKMJD117-TPMicro Commercial CoTRANS PNP 100V 2A DPAK
MJD117T4STMicroelectronicsTRANS PNP DARL 100V 2A DPAKMJD117-RTF/PKECMJD112T4GonsemiTRANS NPN DARL 100V 2A DPAKMJD117T4G MOSMJD117T4onsemiTRANS DARL PNP 2A 100V DPAK
MJD117T4G/J117GAMI Semiconductor/onsemi
MJD112TFonsemiTRANS NPN DARL 100V 2A DPAK
MJD117TFFairchild SemiconductorPOWER BIPOLAR TRANSISTOR, 2A, 10
MJD117-1GonsemiTRANS PNP DARL 100V 2A IPAKMJD112T4G/J112GAMI Semiconductor/onsemiMJD112TFFairchild SemiconductorTRANS NPN DARL 100V 2A DPAKMJD117TFonsemiTRANS PNP DARL 100V 2A DPAKMJD117G J117GAMI Semiconductor/onsemiMJD117 MOSMOTOROLA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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