HGT1S10N120BNS Tech Spezifikatioune
onsemi - HGT1S10N120BNS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGT1S10N120BNS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
Test Condition | 960V, 10A, 10Ohm, 15V | |
Td (on / off) @ 25 ° C | 23ns/165ns | |
Energie schalten | 320µJ (on), 800µJ (off) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | - | |
Power - Max | 298 W | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Type | Standard | |
IGBT Type | NPT | |
Gate Charge | 100 nC | |
Aktuell - Sammler Pulséiert (Icm) | 80 A | |
Aktuell - Sammler (Ic) (Max) | 35 A | |
Basis Produktnummer | HGT1S10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGT1S10N120BNS.
Produktiounsattriff | ||||
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Part Number | HGT1S10N120BNS | HGT1S10N120BNST | HGT1S12N60C3DS | HGT1S12N60A4DS |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Power - Max | 298 W | 298 W | 104 W | 167 W |
Gate Charge | 100 nC | 100 nC | 71 nC | 120 nC |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Energie schalten | 320µJ (on), 800µJ (off) | 320µJ (on), 800µJ (off) | - | 55µJ (on), 50µJ (off) |
Td (on / off) @ 25 ° C | 23ns/165ns | 23ns/165ns | - | 17ns/96ns |
IGBT Type | NPT | NPT | - | - |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V | 600 V | 600 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Sammler Pulséiert (Icm) | 80 A | 80 A | 96 A | 96 A |
Input Type | Standard | Standard | Standard | Standard |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | TO-263AB | TO-263AB |
Basis Produktnummer | HGT1S10 | HGT1S10 | - | - |
Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Bulk |
Test Condition | 960V, 10A, 10Ohm, 15V | 960V, 10A, 10Ohm, 15V | - | 390V, 12A, 10Ohm, 15V |
Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | 2.7V @ 15V, 10A | 2.2V @ 15V, 15A | 2.7V @ 15V, 12A |
Serie | - | - | - | - |
Aktuell - Sammler (Ic) (Max) | 35 A | 35 A | 24 A | 54 A |
Eroflueden HGT1S10N120BNS PDF DataDhusts an onsemi Dokumentatioun fir HGT1S10N120BNS - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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