H11G2S Tech Spezifikatioune
onsemi - H11G2S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - H11G2S
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Ausgab (Max) | 80V | |
| Voltage - Isolatioun | 5300Vrms | |
| Voltage - Viru (Vf) (Typ) | 1.3V | |
| Vce Saturation (Max) | 1V | |
| Turn On / Aus Dreck Time (Typ) | 5µs, 100µs | |
| Supplier Device Package | 6-SMD | |
| Serie | - | |
| Rise / Fall Zäit (Typ) | - | |
| Package / Case | 6-SMD, Gull Wing | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Ausgängegkeet | Darlington with Base | |
| Operatioun Temperatur | -55°C ~ 100°C | |
| Zuel vu Channels | 1 | |
| Mounting Type | Surface Mount | |
| Input Type | DC | |
| Aktuellt Transferverhältnis (Min) | 1000% @ 10mA | |
| Aktuellt Transferverhältnis (Max) | - | |
| Aktuell - Ausgab / Kanal | - | |
| Aktuell - DC Forward (Wann) (Max) | 60 mA | |
| Basis Produktnummer | H11G |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi H11G2S.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | H11G2S | H11G3SR2M | H11G3S | H11G2SR2M |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Rise / Fall Zäit (Typ) | - | - | - | - |
| Aktuell - DC Forward (Wann) (Max) | 60 mA | 60 mA | 60 mA | 60 mA |
| Voltage - Viru (Vf) (Typ) | 1.3V | 1.3V | 1.3V | 1.3V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 100°C | -40°C ~ 100°C | -55°C ~ 100°C | -40°C ~ 100°C |
| Vce Saturation (Max) | 1V | 1.2V | 1.2V | 1V |
| Zuel vu Channels | 1 | 1 | 1 | 1 |
| Ausgängegkeet | Darlington with Base | Darlington with Base | Darlington with Base | Darlington with Base |
| Basis Produktnummer | H11G | H11G | H11G | H11G2 |
| Package / Case | 6-SMD, Gull Wing | 6-SMD, Gull Wing | 6-SMD, Gull Wing | 6-SMD, Gull Wing |
| Turn On / Aus Dreck Time (Typ) | 5µs, 100µs | 5µs, 100µs | 5µs, 100µs | 5µs, 100µs |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Input Type | DC | DC | DC | DC |
| Voltage - Ausgab (Max) | 80V | 55V | 55V | 80V |
| Supplier Device Package | 6-SMD | 6-SMD | 6-SMD | 6-SMD |
| Aktuellt Transferverhältnis (Max) | - | - | - | - |
| Aktuellt Transferverhältnis (Min) | 1000% @ 10mA | 200% @ 1mA | 200% @ 1mA | 1000% @ 10mA |
| Voltage - Isolatioun | 5300Vrms | 7500Vpk | 5300Vrms | 4170Vrms |
| Aktuell - Ausgab / Kanal | - | - | - | - |
Eroflueden H11G2S PDF DataDhusts an onsemi Dokumentatioun fir H11G2S - onsemi.
H11G3SR2MonsemiOPTOISO 7.5KV DARL W/BASE 6SMDH11G3SonsemiOPTOISO 5.3KV DARL W/BASE 6SMDH11G2SR2MonsemiOPTOISO 4.17KV DARL W/BASE 6SMD
H11G2VMonsemiOPTOISO 4.17KV DARL W/BASE 6DIPH11G1SR2VMFairchild SemiconductorDARLINGTON OUTPUT OPTOCOUPLER, 7H11G3MonsemiOPTOISO 7.5KV DARL W/BASE 6DIP
H11G3.300WFairchild (onsemi)H11G1SR2MonsemiOPTOISO 4.17KV DARL W/BASE 6SMDH11G1SMonsemiOPTOISO 4.17KV DARL W/BASE 6SMDH11G3SR2MFairchild SemiconductorDARLINGTON OUTPUT OPTOCOUPLER
H11G2VMFairchild SemiconductorDARLINGTON OUTPUT OPTOCOUPLER, 7H11G1MonsemiOPTOISO 4.17KV DARL W/BASE 6DIPH11G1SR2VMonsemiOPTOISO 4.17KV DARL W/BASE 6SMDH11G2SDonsemiOPTOISO 5.3KV DARL W/BASE 6SMDH11G1SonsemiOPTOISO 5.3KV DARL W/BASE 6SMDH11G2MonsemiOPTOISO 4.17KV DARL W/BASE 6DIP
H11G1SVMAMI Semiconductor/onsemiH11G1VMAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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