FQPF6N60 Tech Spezifikatioune
onsemi - FQPF6N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQPF6N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.8A, 10V | |
Power Dissipation (Max) | 44W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) | |
Basis Produktnummer | FQPF6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQPF6N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQPF6N60 | FQPF6N60 | FQPF6N70 | FQPF6N40CT |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Basis Produktnummer | FQPF6 | - | - | FQPF6 |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 44W (Tc) | 44W (Tc) | 48W (Tc) | 38W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 25 nC @ 10 V | 40 nC @ 10 V | 20 nC @ 10 V |
Serie | QFET® | QFET® | QFET® | QFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.8A, 10V | 1.5Ohm @ 1.8A, 10V | 1.5Ohm @ 1.75A, 10V | 1Ohm @ 3A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | 1000 pF @ 25 V | 1400 pF @ 25 V | 625 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) | 3.6A (Tc) | 3.5A (Tc) | 6A (Tc) |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 700 V | 400 V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Eroflueden FQPF6N60 PDF DataDhusts an onsemi Dokumentatioun fir FQPF6N60 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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