FQB5N90TM Tech Spezifikatioune
onsemi - FQB5N90TM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQB5N90TM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2.7A, 10V | |
Power Dissipation (Max) | 3.13W (Ta), 158W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 900 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.4A (Tc) | |
Basis Produktnummer | FQB5N90 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQB5N90TM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQB5N90TM | FQB5P10TM | FQB5N60CTM | FQB5N60CTM |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | D²PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263AB) | D²PAK (TO-263) |
Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2.7A, 10V | 1.05Ohm @ 2.25A, 10V | 2.5Ohm @ 2.25A, 10V | 2.5Ohm @ 2.25A, 10V |
Basis Produktnummer | FQB5N90 | - | FQB5 | FQB5 |
Serie | QFET® | QFET® | QFET® | QFET® |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 900 V | 100 V | 600 V | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 8.2 nC @ 10 V | 19 nC @ 10 V | 19 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V | 250 pF @ 25 V | 670 pF @ 25 V | 670 pF @ 25 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.4A (Tc) | 4.5A (Tc) | 4.5A (Tc) | 4.5A (Tc) |
Power Dissipation (Max) | 3.13W (Ta), 158W (Tc) | 3.75W (Ta), 40W (Tc) | 3.13W (Ta), 100W (Tc) | 3.13W (Ta), 100W (Tc) |
Eroflueden FQB5N90TM PDF DataDhusts an onsemi Dokumentatioun fir FQB5N90TM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.