FDP61N20 Tech Spezifikatioune
onsemi - FDP61N20 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP61N20
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | UniFET™ | |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30.5A, 10V | |
| Power Dissipation (Max) | 417W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) | |
| Basis Produktnummer | FDP61 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP61N20.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | FDP61N20 | FDP6670AL | FDP6676 | FDP65N06 |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
| Serie | UniFET™ | PowerTrench® | PowerTrench® | UniFET™ |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 25 V | 2440 pF @ 15 V | 5324 pF @ 15 V | 2170 pF @ 25 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Basis Produktnummer | FDP61 | FDP66 | - | FDP65 |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | 33 nC @ 5 V | 60 nC @ 5 V | 43 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 417W (Tc) | 68W (Tc) | 93W (Tc) | 135W (Tc) |
| FET Feature | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) | 80A (Ta) | 84A (Ta) | 65A (Tc) |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 200 V | 30 V | 30 V | 60 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (Max) | ±30V | ±20V | ±16V | ±20V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30.5A, 10V | 6.5mOhm @ 40A, 10V | 6mOhm @ 42A, 10V | 16mOhm @ 32.5A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Eroflueden FDP61N20 PDF DataDhusts an onsemi Dokumentatioun fir FDP61N20 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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