FDMS10C4D2N Tech Spezifikatioune
onsemi - FDMS10C4D2N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDMS10C4D2N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 44A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | FDMS10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDMS10C4D2N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMS10C4D2N | FDMS039N08B | FDMS1D5N03 | FDMS2506SDC |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±16V | ±20V |
Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 44A, 10V | 3.9mOhm @ 50A, 10V | 1.15mOhm @ 40A, 10V | 1.45mOhm @ 30A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 4.5V, 10V | 4.5V, 10V |
Basis Produktnummer | FDMS10 | FDMS039 | FDMS1D5 | FDMS25 |
Serie | - | PowerTrench® | PowerTrench® | Dual Cool™, PowerTrench®, SyncFET™ |
Power Dissipation (Max) | 125W (Tc) | 2.5W (Ta), 104W (Tc) | 83W (Tc) | 3.3W (Ta), 89W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 100 nC @ 10 V | 63 nC @ 4.5 V | 93 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 50 V | 7600 pF @ 40 V | 9690 pF @ 15 V | 5945 pF @ 13 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 250µA | 2V @ 250µA | 3V @ 1mA |
Entworf fir Source Voltage (Vdss) | 100 V | 80 V | 30 V | 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 19.4A (Ta), 100A (Tc) | 218A (Tc) | 39A (Ta), 49A (Tc) |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Eroflueden FDMS10C4D2N PDF DataDhusts an onsemi Dokumentatioun fir FDMS10C4D2N - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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