FDA75N28 Tech Spezifikatioune
onsemi - FDA75N28 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDA75N28
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3PN | |
Serie | UniFET™ | |
Rds On (Max) @ Id, Vgs | 41mOhm @ 37.5A, 10V | |
Power Dissipation (Max) | 520W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 280 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | |
Basis Produktnummer | FDA75 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDA75N28.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDA75N28 | FDA69N25 | FDA70N20 | FDA8440 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | FDA75 | FDA69 | - | FDA84 |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 41mOhm @ 37.5A, 10V | 41mOhm @ 34.5A, 10V | 35mOhm @ 35A, 10V | 2.1mOhm @ 80A, 10V |
Package protegéieren | Tube | Tube | Bulk | Tube |
Power Dissipation (Max) | 520W (Tc) | 480W (Tc) | 417W (Tc) | 306W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 280 V | 250 V | 200 V | 40 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Serie | UniFET™ | UniFET™ | UniFET™ | PowerTrench® |
Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V | 100 nC @ 10 V | 86 nC @ 10 V | 450 nC @ 10 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 3V @ 250µA |
Supplier Device Package | TO-3PN | TO-3PN | TO-3PN | TO-3PN |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 69A (Tc) | 70A (Tc) | 30A (Ta), 100A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V | 4640 pF @ 25 V | 3970 pF @ 25 V | 24740 pF @ 25 V |
Eroflueden FDA75N28 PDF DataDhusts an onsemi Dokumentatioun fir FDA75N28 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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