BCW68GLT1G Tech Spezifikatioune
onsemi - BCW68GLT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BCW68GLT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 30mA, 300mA | |
| Transistor Type | PNP | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | - | |
| Power - Max | 225 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 100MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 1V | |
| Aktuell - Kollektorat Cutoff (Max) | 20nA | |
| Aktuell - Sammler (Ic) (Max) | 800 mA | |
| Basis Produktnummer | BCW68 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BCW68GLT1G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BCW68GLT1G | BCW68HE6327HTSA1 | BCW68GE6327 | BCW68HTA |
| Hiersteller | onsemi | Infineon Technologies | Infineon Technologies | Diodes Incorporated |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) | PG-SOT23 | PG-SOT23-3-1 | SOT-23-3 |
| Aktuell - Kollektorat Cutoff (Max) | 20nA | 20nA (ICBO) | 20nA (ICBO) | 20nA |
| Frequenz - Iwwergang | 100MHz | 200MHz | 200MHz | 100MHz |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 1V | 250 @ 100mA, 1V | 160 @ 100mA, 1V | 250 @ 100mA, 1V |
| Basis Produktnummer | BCW68 | BCW68 | - | BCW68 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Serie | - | - | Automotive, AEC-Q101 | - |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 45 V | 45 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 30mA, 300mA | 700mV @ 50mA, 500mA | 700mV @ 50mA, 500mA | 300mV @ 10mA, 100mA |
| Aktuell - Sammler (Ic) (Max) | 800 mA | 800 mA | 800 mA | 800 mA |
| Transistor Type | PNP | PNP | - | PNP |
| Power - Max | 225 mW | 330 mW | 330 mW | 330 mW |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden BCW68GLT1G PDF DataDhusts an onsemi Dokumentatioun fir BCW68GLT1G - onsemi.
BCW68FE6327Cypress Semiconductor (Infineon Technologies)BCW68HE6327HTSA1Infineon TechnologiesTRANS PNP 45V 0.8A SOT23BCW68FCypress Semiconductor (Infineon Technologies)BCW68G E6327Cypress Semiconductor (Infineon Technologies)BCW68GE6327Infineon TechnologiesSMALL SIGNAL BIPOLAR TRANSISTORBCW68G E6433Cypress Semiconductor (Infineon Technologies)BCW68HTADiodes IncorporatedTRANS PNP 45V 0.8A SOT23-3
BCW68GRNexperiaBCW68F E6327Cypress Semiconductor (Infineon Technologies)
BCW68GLT1onsemiTRANS PNP GP 45V 800MA SOT-23BCW70GCypress Semiconductor (Infineon Technologies)
BCW68GFairchild SemiconductorTRANS PNP 45V 0.8A SOT23-3
BCW68HCJBCW68HE6327Cypress Semiconductor (Infineon Technologies)BCW68GonsemiTRANS PNP 45V 0.8A SOT23-3BCW68GLT3GONsemiBCW70BCW68H E6327Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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